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| Kohei M. Itoh, Ph.
D. |
| RESEARCH INTEREST |
| Electronic Materials,
Semiconductor Physics and Engineering |
| EDUCATION |
Ph.D., Materials
Science & Engineering, University of California at Berkeley, 12/1994
M.S., Materials Science & Engineering, University of California at
Berkeley, 12/1994
B.Eng., Instrumentation Engineering, Keio University, 3/1989 |
| RESEARCH AND PROFESSIONAL EXPERIENCE |
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Associate Professor, Dept. Applied Physics and Physico-Informatics,
Keio University 4/2002-present
Assistant Professor, Dept. Applied Physics and Physico-Informatics,
Keio University 4/1998-3/2002
Instrucdtor, Dept. Applied Physics and Physico-Informatics, Keio
University 4/1995-3/1998
Post-doctoral fellow, Lawrence Berkeley National Laboratory 1/1995-3/1995
Member of the American Physical Society, the Physical Society of
Japan, the Japan Society of Applied Physics, and the Materials Research
Society.
Recipiant of:
J. W. Corbett Prize, The 18th International Conference on Defects
in Semiconductors - 1996
Young Author Best Paper Award, The 22nd International Conference
on Physics of Semiconductors
Scholastic Achievement Award, American Society for Metals Golden
Gate Chapter, 1992.
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| MAJOR PUBLICATIONS |
- T. D. Ladd, J. R. Goldman, F. Yamaguchi, Y. Yamamoto, E.Abe,
and K. M. Itoh, "All-Silicon Quantum Computer," Phys.
Rev. Lett. 89, 017901-1 (2002).
- K. Morita, K. M. Itoh, L. Hoffmann, B. Bech Nielsen, H. Harima,
and K. Mizoguchi, "Raman Investigation of the Localized Vibrational
Mode of Carbon in Strain-Relaxed Si1-xGex:C," Jpn. J. Appl.
Phys. 40, 5905-5906 (2001).
- J. Kato, K. M. Itoh, and E. E. Haller, "Observation of
the Random-Correlated Transition of Ionized Impurity Distribution
in Compensate Semiconductors," Phys. Rev. B, 65, 241201(R)1-4
(2002).
- H. Iwata and K. M. Itoh, "Donor and Acceptor Concentration
Dependence of the Electron Mobility and the Hall Scattering Factor
in N-Type 4H- and 6H-SiC," J. Appl. Phys.,89, 6228-6234,(2001).
- Michio Watanabe, Kohei M. Itoh, Youiti Ootuka, Eugene E. Haller,
"Localization Length and Impurity Dielectric Susceptibility
in the Critical Regime of the Metal-Insulator Transition in Homogeneously
Doped P-Type Ge," Phys. Rev. B, 62, R2255-R2258 (2000).
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